Our Silicon Avalanche Photodiode (APDs) are high-performance photodetectors designed for precision optical measurement, long-range detection, and laser-based sensing systems. Featuring high sensitivity, low noise, and fast response speed, these APDs are optimized for applications such as distance measurement, LIDAR, industrial laser detection, and optical instrumentation.

Available in φ1.8 mm and φ3 mm active area versions, and supporting both 905 nm and 1064 nm wavelengths, they provide excellent detection efficiency across the 400–1100 nm spectral range.

주요 기능

• High Sensitivity & Low Noise
  Ensures accurate detection of weak optical signals in long-distance and low-light environments.

• 빠른 응답 시간
  Suitable for high-frequency ranging systems, TOF measurement, and pulse detection.

• High Gain & Reliability
  Stable multiplication factor with consistent performance across temperature changes.

• Wide Spectral Response
  400–1100 nm response range with peak sensitivity at 905 nm or 1064 nm.

• Robust TO-5 Metal Packaging
  With glass window for durability and long-term stability in industrial environments.

일반적인 애플리케이션

• Laser distance measurement & TOF sensing

• LIDAR systems (robotics, UAV, AGV, surveying)

• Industrial automation laser detectors

• Optical communication & pulse detection

• Non-contact measurement equipment

• Scientific instruments & photoelectric conversion systems

Product Lineup

1. APD φ1.8 – 905 nm Silicon Avalanche Photodiode

• Active area: 1.8 mm

• Responsivity: 50–55 A/W @ 905 nm, M=100

• Rise time: 3 ns

• Dark current: 3–8 nA

• Terminal capacitance: 8 pF

• Breakdown voltage: 120–300 V

• Temperature coefficient: 1.3 V/°C

2. APD φ3 – 905 nm Silicon Avalanche Photodiode

• Active area: 3.0 mm

• Responsivity: 50–55 A/W @ 905 nm

• Rise time: 10 ns

• Dark current: 15–50 nA

• Terminal capacitance: 20 pF

• Breakdown voltage: 120–300 V

• Temperature coefficient: 1.3 V/°C

3. APD φ1.8 – 1064 nm Silicon Avalanche Photodiode

• Active area: 1.8 mm

• Responsivity: 28 A/W @ 1064 nm

• Rise time: 15 ns

• Dark current: 20–50 nA

• Terminal capacitance: 5 pF

• Breakdown voltage: 360–480 V

• Temperature coefficient: 2.6 V/°C

4. APD φ3 – 1064 nm Silicon Avalanche Photodiode

• Active area: 3.0 mm

• Responsivity: 36 A/W @ 1064 nm

• Rise time: 20 ns

• Dark current: 40–80 nA

• Terminal capacitance: 7 pF

• Breakdown voltage: 360–480 V

• Temperature coefficient: 3.3 V/°C

Recommended Operating Conditions

• Reverse bias operation

• Recommended working voltage: 90% × VBR

Absolute Maximum Ratings

• Operating temperature: –45°C to +85°C

• Storage temperature: –55°C to +100°C

• Maximum soldering temperature: 260°C (10 s)

• Maximum reverse voltage: 95% × VBR

• Max forward current: 10 mA

Mechanical Structure

• Package: TO-5 metal housing

• Window: Glass optical window

• Pin assignment:
  Pin 1 = Anode, Pin 2 = Cathode, Pin 3 = Case

Handling & Safety Notes

• The APD must operate under correct reverse bias polarity. Reversed polarity may cause permanent damage.

• Proper ESD protection is required during installation, transportation, and storage.

• Ensure clean and stable power supply for optimal gain stability.

Why Choose Our Silicon APDs?

• Optimized for laser distance sensing and LIDAR

• Consistent performance across extreme temperatures

• Excellent cost-performance ratio

• Industrial-grade packaging suitable for harsh environments

• Compatible with most laser wavelength systems (905 nm, 1064 nm)